2SC2538

 
 
 
  Typ: HF-Leistungstransistor NPN
  • High Power Gain:  Gpe >/= 10dB (VCC = 13,5V, PO = 0,5W, f = 27MHz)
  • Ability to Withstand Infinite VSWR Load when Operated at:
          VCC = 16V, PO = 20W, f = 27MHz
  • 10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band

 

 
 
 
 
 


B  C  E

 
 
 
 
Collector-Emitter Voltage (RBE = Infinity), VCEO 17 V
Collector-Base Voltage, VCBO 40 V
Emitter-Base Voltage, VEBO 4 V
Collector Current, IC 0,4 A
Collector Power Dissipation (TA = +25C), PD 0,7 W
Collector Power Dissipation (TC = +50C), PD 3 W
Operating Junction Temperature, TJ +135 C
Storage Temperatur Bereich, Tstg -55 to +135 C
Thermal Resistance, Junction-to-Case, RthJC 36,7 C/W
Thermal Resistance, Junction-to-Ambient, RthJA 157 C/W
 
 
 
 
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 15V IE = 0 - - 100 A
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 200 A
DC Forward Current Gain hFE VCE = 10V, IC = 0,1 A 10 80 300  
Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 500 600 - mW
Collector Efficiency nc 45 55 - %