2SC2166

 
 
 
  Typ: HF-Leistungstransistor NPN
  • High Power Gain:  Gpe >/= 13,8dB (VCC = 12V, PO = 6W, f = 27MHz)
  • 3 to 4 Watt Output Power Class AB Amplifier Applications in HF Band

 

 
 
 
 
 


B  C  E

 
 
 
 
Collector-Emitter Voltage (RBE = Infinity), VCEO 75V
Collector-Base Voltage, VCBO 75V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC 4A
Collector Power Dissipation (TA = +25C), PD 1.5W
Collector Power Dissipation (TC = +50C), PD 12,5W
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C
Thermal Resistance, Junction-to-Case, RthJC 10C/W
Thermal Resistance, Junction-to-Ambient, RthJA 83C/W
 
 
 
 
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 75 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 75 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 A
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 A
DC Forward Current Gain hFE VCE = 12V, IC = 100mA, Note 1 35 70 180  
Power Output PO VCC = 12V, Pin = 0,25W, f = 27MHz 6 7,5 - W
Collector Efficiency   55 60 - %