2SC1970

 
 
 
  Typ: HF-Leistungstransistor NPN
  • High Power Gain:  Gpe >/= 9,2dB (VCC = 13.5V, PO = 6W, f = 175MHz)
  • 0,8 to 1 Watt Output Power Amplifier Applications in VHF Band

 

 
 
 
 
 


B  E  C

 
 
 
 
Collector-Emitter Voltage (RBE = Infinity), VCEO 17V
Collector-Base Voltage, VCBO 35V
Emitter-Base Voltage, VEBO 4V
Collector Current, IC 0,6A
Collector Power Dissipation (TA = +25C), PD 1W
Collector Power Dissipation (TC = +50C), PD 5W
Operating Junction Temperature, TJ +150C
Storage Temperature Range, Tstg -55 to +150C
Thermal Resistance, Junction-to-Case, RthJC 25C/W
Thermal Resistance, Junction-to-Ambient, RthJA 125#176;C/W

 

 
 
 
 
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - V
Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 100 A
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 100 A
DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180  
Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 1 1,2 - W
Collector Efficiency   50 60 - %