2SC1678

 
 
 
  Typ: HF-Leistungstransistor NPN
  • High Power Gain:  Gpe >/= 12dB (VCC = 12V, PO = 4W, f = 27MHz)
  • Ability to Withstand Infinite VSWR Load when Operated at:
          VCC = 12V, PO = 0,4W, f = 27MHz
  • 3 to 4 Watt Output Power Class AB Amplifier Applications in HF Band

 

 
 
 
NPN
 


B  C  E

 
 
 
 
High Power Gain GPE 12 dB
Collector-Emitter Voltage VCER 25 V
Collector-Base Voltage VCBO 65 V
Emitter-Base Voltage VEBO 4 V
Collector Current IC 3 A
Base Current IB 0,4 A
Emitter Current IE -3 A
Collector Power Dissipation (TA = +25C) PD 1.7W
Collector Power Dissipation (TC = +50C) PD 20W
Operating Junction Temperature TJ +150C
Storage Temperature Range Tstg -55 to +150C
Thermal Resistance, Junction-to-Case RthJC 6.25C/W
Thermal Resistance, Junction-to-Ambient RthJA 73.5C/W
 
 
 
 
Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 65 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 A
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 A
DC Forward Current Gain hFE VCE = 5V, IC = 0,5A

15

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DC Forward Current Gain hFE VCE = 5V, IC = 1,5A 10 - -  
Power Output PO VCC = 12V, Pin = 0,4W, f = 27MHz 3 4 - W
Collector Efficiency   60 70 - %